Designation : Visiting Professor from Shizuoka University, Japan
Hiroshi Inokawa received B.S., M.S., and Ph.D. degrees in electrical engineering from Kyoto University, Japan in 1980, 1982 and 1985, respectively. In 1985, he joined the Atsugi Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation (NTT), Kanagawa, Japan. Since then, he has been engaged in the research and development of scaled-down CMOS devices and silicon single-electron devices. During the course of his research, he invented the basic structure of FinFET in 1989 and single-electron multiple-valued logic in 2001, and received IEEE International Symposium on Multiple-Valued Logic (ISMVL) Outstanding Contributed Paper Awards in 2004 and 2006, Director’s Award of NTT Basic Research Laboratories in 2004, 28th JSAP Award for the Best Original Paper in 2006, etc. In 2006, he became a professor of the Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan, where he has been studying nanodevices for advanced circuits and systems. His recent work on SOI MOSFET single-photon detector was introduced by IEEE Photonics Journal in 2012 as a Breakthrough in Photonics.
Prof. Inokawa is a member of the Institute of Electrical and Electronics Engineers (IEEE), the Japan Society of Applied Physics (JSAP), the Institute of Electronics, Information and Communication Engineers of Japan (IEICE), and the Institute of Electrical Engineers of Japan (IEEJ). He has served as a JSAP board member of representative in 2001-2003, an editor of JJAP in 2007-2013, the chair of the IEEJ survey committee of silicon nanosystem integration technology in 2009-2011, an advisory committee member of NICT Japan Trust International Research Cooperation Program in 2006-2009, a researcher of National Institute of Science and Technology Policy (NISTEP) in 2002-present, etc.